• A
  • A
  • A
  • АБВ
  • АБВ
  • АБВ
  • A
  • A
  • A
  • A
  • A
Обычная версия сайта
  • RU
  • EN
  • HSE University
  • Publications
  • Articles
  • Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs
  • RU
  • EN
Расширенный поиск
Высшая школа экономики
Национальный исследовательский университет
Priority areas
  • business informatics
  • economics
  • engineering science
  • humanitarian
  • IT and mathematics
  • law
  • management
  • mathematics
  • sociology
  • state and public administration
by year
  • 2028
  • 2027
  • 2026
  • 2025
  • 2024
  • 2023
  • 2022
  • 2021
  • 2020
  • 2019
  • 2018
  • 2017
  • 2016
  • 2015
  • 2014
  • 2013
  • 2012
  • 2011
  • 2010
  • 2009
  • 2008
  • 2007
  • 2006
  • 2005
  • 2004
  • 2003
  • 2002
  • 2001
  • 2000
  • 1999
  • 1998
  • 1997
  • 1996
  • 1995
  • 1994
  • 1993
  • 1992
  • 1991
  • 1990
  • 1989
  • 1988
  • 1987
  • 1986
  • 1985
  • 1984
  • 1983
  • 1982
  • 1981
  • 1980
  • 1979
  • 1978
  • 1977
  • 1976
  • 1975
  • 1974
  • 1973
  • 1972
  • 1971
  • 1970
  • 1969
  • 1968
  • 1967
  • 1966
  • 1965
  • 1964
  • 1963
  • 1958
  • More
Subject
News
September 7, 2026
Biologists Discover 'Molecular Fingerprint' of Preeclampsia
Researchers at HSE University employed a new method to model hypoxia in placental cells during pregnancies complicated by preeclampsia and identified molecular markers of tissue hypoxia. Since hypoxia is one of the key mechanisms underlying preeclampsia, these findings are important for a more accurate and timely diagnosis of the disease and for the development of effective treatment methods. The paper has been published in Placenta.
September 7, 2026
‘Speech, Facial Expressions, and Gestures Cannot Lie
Would you like to know whether a speaker’s trembling voice or an accidental gesture can give them away? At HSE University in Nizhny Novgorod, researchers are developing an algorithm that analyses speech, facial expressions, and gestures, and determines whether information is truthful with 92% accuracy. The project has applications ranging from forensic examination and bank recruitment to fundamental research. Anna Khomenko, head of the research group and Senior Research Fellow at the Centre for Language and Brain at the HSE Faculty of Humanities in Nizhny Novgorod, explains how students and researchers are working together to create a corpus of video recordings, train a classifier, and prepare to introduce computer vision technology.
September 4, 2026
Time to Showcase Your Research: Applications Are Now Open for Student Research Paper Competition 2026
Taking part in the Student Research Paper Competition (SRPC) gives you an opportunity to present your research to experts, receive an independent assessment, and determine the future direction of your work. The competition is open to students graduating in 2026 not only from HSE University but from universities in Russia and abroad. Papers may be submitted in Russian and English, and in some fields also in French, German, and Spanish.

 

Have you spotted a typo?
Highlight it, click Ctrl+Enter and send us a message. Thank you for your help!

Publications
  • Books
  • Articles
  • Chapters of books
  • Working papers
  • Report a publication
  • Research at HSE

?

Electric-field-induced polarization anisotropy of interband photoluminescence in GaAs

Journal of Applied Physics. 2024. Vol. 136. No. 19. Article 195703.
Shalygin V. A., Makhov I., Adamov R. B., Vinnichenko M. Y., Khvostikov V. P., Firsov D. A.

Near-infrared photoluminescence spectra of the n-doped gallium arsenide epilayer under heating lateral electric field conditions are studied. The field dependences of hot electron and hole temperatures are determined from photoluminescence spectra and from solving the power balance equation using current–voltage characteristic. Polarization anisotropy of the photoluminescence radiation arising due to the anisotropy of hot electron distribution function and angular dependence of the interband optical matrix element in the momentum space is observed and investigated. The obtained experimental data are in satisfactory agreement with the theoretical model.

Research target: Physics Nanotechnologies
Language: English
Full text
DOI
Text on another site
Keywords: анизотропияanisotropy photoluminescenceгорячие носители зарядафотолюминесценцияHot carriers
Similar publications
Interband effects in the intertype regime of dirty two-band superconductors
Marychev P., Shanenko A., Physical Review B: Condensed Matter and Materials Physics 2026 Vol. 114 No. 7 Article 074509
We investigate the effect of weak interband impurity scattering on the intertype (IT) domain between type-I and type-II superconductivity in diffusive two-band superconductors. Our results show that the significant broadening of the IT domain with increasing band diffusivity ratio, previously established in the absence of interband scattering, persists under weak interband scattering. However, depending on ...
Added: September 7, 2026
Элементы теории топологических изоляторов
Denis K., Н. Новгород: Нижегородский государственный университет им. Н.И. Лобачевского, 2025.
В учебном пособии излагаются элементы теории и описание избранных экспериментальных результатов, полученных в активно развивающейся физике топологических изоляторов. Рассмотрены наиболее простые модели поверхностных и краевых состояний в двумерных и трёхмерных топологических изоляторах, их структура в магнитном поле, а также основы топологических методов для определения их свойств. Обсуждаются модели квантовых точек, формируемых в топологических изоляторах. Приведены ...
Added: September 6, 2026
Импульсное лазерное облучение светоизлучающих структур со слоем (Ga,Mn)As
Denis K., Звонков Б. Н., Вихрова О. В. et al., Физика твердого тела 2021 Т. 63 № 9 С. 1245–1252
Сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения изготовлены гетеронаноструктуры InGaAs/GaAs со слоем (Ga, Mn)As на поверхности, и исследовано влияние воздействия импульсного эксимерного лазера (длина волны 248 nm, длительность импульса ~30 ns, плотность энергии в диапазоне 200-360 mJ/cm2) на их излучательные, структурные и гальваномагнитные свойства. При исследованиях использовалась спектроскопия фотолюминесценции, дополненная возможностью анализа поляризационных характеристик ...
Added: September 6, 2026
Воздействие импульсов эксимерного лазера на светоизлучающие InGaAs/GaAs-структуры с (Ga, Mn)As-слоем
Denis K., Вихрова О. В., Данилов Ю. А. et al., Физика твердого тела 2021 Т. 63 № 3 С. 346–355
Исследована возможность модифицирования лазерным отжигом свойств слоя (Ga, Mn)As, расположенного на поверхности квантово-размерной InGaAs/GaAs-структуры, с сохранением ее излучательных свойств. Для проведения исследований сочетанием методов МОС-гидридной эпитаксии и импульсного лазерного нанесения были изготовлены структуры с четырьмя квантовыми ямами InGaAs/GaAs, (содержание индия от 0.08 до 0.25), расположенными на различном расстоянии от слоя (Ga, Mn)As. В процессе исследований ...
Added: September 6, 2026
Quasistationary states in a quantum dot formed at the edge of a topological insulator by magnetic barriers with finite transparency
Denis K., Lavrukhina E. A., Journal of Physics: Conference Series 2021 Vol. 2103 Article 012201
A model of quasistationary states is constructed for the one-dimensional edge states propagating along the edge of a two-dimensional topological insulator based on HgTe/CdTe quantum well in the presence of magnetic barriers with finite transparency. The lifetimes of these quasistationary states are found analytically and numerically via different approaches including the solution of the stationary ...
Added: September 6, 2026
Role of resident electrons in the manifestation of a spin polarization memory effect in Mn delta-doped GaAs heterostructures
Denis K., Dorokhin M. V., Ved M. V. et al., Physical Review B: Condensed Matter and Materials Physics 2021 Vol. 104 No. 12 Article 125309
The GaAs/InGaAs quantum wells with a ferromagnetic δ〈Mn〉 layer in GaAs barrier demonstrate a set of interesting spin-related phenomena originating from Mn-hole interaction. One of such phenomena is a spin-memory effect which consists of Mn spin polarization induced by interaction with vicinity spin-polarized holes generated under the exposure by short circularly polarized light pulses. Here long Mn ...
Added: September 6, 2026
Спин-зависимое туннелирование в двойной квантовой точке в режиме "медленной" эволюции
Denis K., Запруднов Н. А., Физика и техника полупроводников 2022 Т. 56 № 10 С. 973–978
Исследована динамика туннелирования и спина для дырочных состояний в двойной квантовой точке на основе GaAs при наличии сильного спин-орбитального взаимодействия и периодического электрического поля. Рассмотрены режимы туннелирования с переворотом спина в условиях "медленной" эволюции, при которой частота поля меньше остальных энергетических параметров стационарной части гамильтониана. Обнаружено, что в таких условиях туннелирование с переворотом спина может ...
Added: September 6, 2026
Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers
Denis K., Kalentyeva I. L., Vikhrova O. V. et al., Journal of Magnetism and Magnetic Materials 2022 Vol. 556 Article 169360
We have investigated the layers of the (Ga,Mn)As diluted magnetic semiconductor with the thickness in the range of 150 – 400 nm, which have been formed by the combination of the methods of a pulsed laser deposition and a post-growth pulsed laser annealing. It has been found that the laser annealing has a significant effect on the structural, ...
Added: September 6, 2026
Formation of bound states from the edge states of 2D topological insulator by macroscopic magnetic barriers
Denis K., Konakov A. A., Lavrukhina E. A., Journal of Physics: Condensed Matter 2022 Vol. 34 Article 405302
A model of bound state formation from the delocalized edge states of 2D topological insulator (TI) is derived by considering the effects of magnetic barriers attached to the edge of the HgTe/CdTe quantum well. The resulting structure has a spatial form of 1D quantum dot (QD) with variable number of bound states depending on barrier ...
Added: September 6, 2026
Single-spin Landau-Zener-Stückelberg-Majorana interferometry of Zeeman-split states with strong spin-orbit interaction in a double quantum dot
Denis K., Studenikin S. A., Physical Review B: Condensed Matter and Materials Physics 2022 Vol. 106 No. 19 Article 195414
Single-spin state evolution induced by the Landau-Zener-Stückelberg-Majorana (LZSM) interference in a Zeeman-spit four-level system in a periodically driven double quantum dot is studied theoretically by the Floquet stroboscopic method. An interplay between spin-conserving and spin-flip tunneling processes with the electric dipole spin resonance (EDSR) that is induced in an individual dot and enhanced by the ...
Added: September 6, 2026
Формирование связанных состояний и управление их локализацией в двойной квантовой точке на крае двумерного топологического изолятора с магнитными барьерами
Denis K., Лаврухина Е. А., Тележников А. В., Физика и техника полупроводников 2023 Т. 57 № 7 С. 551–554
Разработана модель локализованных состояний в двойной квантовой точке на крае топологического изолятора на основе квантовой ямы HgTe/CdTe, сформированной тремя магнитными барьерами. Исследованы особенности энергетического спектра, плотности вероятности и спиновой плотности квантовых состояний в зависимости от ориентации векторов намагниченности магнитных барьеров. Изучена локализация волновых функций слева и справа от точки антикроссинга в спектре и сделан вывод ...
Added: September 6, 2026
Controllable single-spin evolution at subharmonics of electric dipole spin resonance enhanced by four-level Landau-Zener-Stückelberg-Majorana interference
Denis K., Bastrakova M. V., Munyaev V. O. et al., Physical Review B: Condensed Matter and Materials Physics 2023 Vol. 108 No. 20 Article 205404
Subharmonics of electric dipole spin resonance (EDSR) mediated by Landau-Zener-Stückelberg-Majorana tunneling transitions are studied numerically and analytically in a Zeeman-split four-level system with strong spin-orbit coupling that can be realized, for example, in a GaAs-based double quantum dot in a single-hole regime. The spin qubit is formed in one of the dots and the second ...
Added: September 6, 2026
Управление спиновой динамикой в двойной квантовой точке в условиях электрического дипольного спинового резонанса через перестраиваемое спин-орбитальное взаимодействие
Denis K., Запруднов Н. А., Физика и техника полупроводников 2024 Т. 58 № 4 С. 173–178
Рассматривается влияние соотношения вкладов Рашбы и Дрессельхауза в спин-орбитальном взаимодействии на траекторию спина на сфере Блоха, индуцируемую периодическим электрическим полем в двойной квантовой точке в полупроводнике GaAs, при условии электрического дипольного спинового резонанса. Показано, что изменение амплитуды параметра Рашбы, которое может быть осуществлено полем затвора, приводит к изменению плоскости вращения спина в широких пределах. Предсказанный ...
Added: September 6, 2026
Digital InGaAs/InAlAs short-period superlattices intended for 1.3-μm InP-lasers
V.I. Voitovich, I.S. Makhov, Andryushkin V. V. et al., Journal of Luminescence 2026 Vol. 295 Article 121936
We report on a comparative study of the optical and structural properties of short-period superlattices (SPSLs) based on digital ternary InGaAs/InAlAs alloys and their counterparts with quaternary InGaAlAs barriers, both grown on InP substrates and emitting in the 1.3 μm wavelength range. The heterostructures were grown by molecular beam epitaxy and analyzed using photoluminescence spectroscopy ...
Added: July 8, 2026
Nanoscale Welding and Strain-Engineered Photoluminescence of GaN Nanowires
Sharov V., Pavlov A., Eliseyev I. et al., Advanced Optical Materials 2025 Vol. 13 No. 30 Article e01821
Strain engineering is a powerful tool for the development of nanostructured semiconductor devices. In this work, the effect of high external elastic strain is investigated on the photoluminescence of GaN nanowires (NWs). Individual horizontal NWs are strained to bending strains up to 2.2% using an atomic force microscope (AFM) probe. Novel nanomanipulation techniques for mechanical ...
Added: November 12, 2025
Optimal As/Ga flux ratio for low-temperature overgrowth of InAs quantum dots dependent on the GaAs overgrowth rate
Balakirev S. V., Makhov I., Kirichenko D. V. et al., Optical Materials 2025 Vol. 163 Article 116964
We reveal a strong dependence of optical properties of InAs quantum dots (QDs) on the As/Ga flux ratio used during the overgrowth with a low-temperature GaAs layer. Evaluating various characteristics of the photoluminescence spectra, we determine an optimal As/Ga flux ratio which allows formation of QDs emitting at the longest wavelengths, with the highest intensity and the largest ...
Added: April 17, 2025
Correlation and exchange energies of a quantum Hall ferromagnet with 𝜈=1/3 in the strong interaction regime
P. S. Berezhnoy, Koreyev A. S., A. B. Van'kov et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 23 Article 235306
Collective spin excitations were utilized to probe many-particle energies of strongly correlated quantum Hall ferromagnets (FMs) at 1/3< ν < 1. For this purpose, experiments on inelastic light scattering and polarized photoluminescence (PL) were performed on a MgZnO/ZnO heterostructure, containing a high-mobility two dimensional electron system with theWigner-Seitz parameter rs ≈ 11. The dispersion of the Larmor spin exciton ...
Added: January 14, 2025
Phase diagram of magnetoexciton condensate
Koreyev A. S., P.S. Berezhnoy, Gorbunov A. V. et al., Physical Review B: Condensed Matter and Materials Physics 2024 Vol. 110 No. 16 Article 165417
The phase diagram of the “gas-magnetoexciton condensate” transition of an excited two-dimensional electron system placed in a quantizing magnetic field has been constructed in the “temperature-laser excitation power density” coordinates. Based on the experimental data, we can conclude that the condensate is a collective, incompressible in real space, excited state of a quantum Hall insulator. ...
Added: January 10, 2025
Фотолюминесценция сверхрешеток GaPNAs/GaP(N) и объемных слоев GaPN на подложках GaP
Никитина Е. В., Соболев М. С., Пирогов Е. В. et al., Конденсированные среды и межфазные границы 2024 Т. 26 № 3 С. 490–495
Добавление нескольких процентов азота в GaP или GaPAs позволяют получить твердые растворы GaPNAs, согласованные по параметру кристаллической решетки с кремниевой подложкой в большом диапазоне значений ширины запрещенной зоны, что дает возможность получения оптоэлектронных кремниевых интегральных схем. Однако материалы с небольшой долей азота являются мало изученными из-за сложности в эпитаксиальном выращивании четверных твердых растворов с тремя ...
Added: November 24, 2024
Оптическая спектроскопия монокристаллов неорганического cвинцово-галогенидного перовскита CsPbBr3
Anikeeva V., Болдырев Н. Ю., Семенова О. И. et al., Оптика и спектроскопия 2024 Т. 132 № 8 С. 793–799
The paper presents the results of the temperature dependences study of the luminescence spectra (3.6 – 120 K) upon excitation by 405 nm light and of the non-contact measured photoconductivity spectra (3.6 – 300 K) of a CsPbBr3 single crystal. In the low-temperature photoluminescence (PL) spectrum, in addition to the self-trapped exciton line (2.318 eV at 10 K), a rich ...
Added: October 29, 2024
Influence of anisotropy on the study of critical behavior of spin models by machine learning methods
Sukhoverkhova D., Shchur L., / Series arXiv "math". 2024. No. 2410.14523.
In this paper, we applied a deep neural network to study the issue of knowledge transferability between statistical mechanics models. The following computer experiment was conducted. A convolutional neural network was trained to solve the problem of binary classification of snapshots of the Ising model's spin configuration on a two-dimensional lattice. During testing, snapshots of ...
Added: October 21, 2024
Влияние анизотропии на исследование критического поведения спиновых моделей методами машинного обучения
Sukhoverkhova D., Shchur L., Письма в Журнал экспериментальной и теоретической физики 2024 Т. 120 № 8 С. 644–649
In this paper, we applied a deep neural network to study the issue of knowledge transferability between statistical mechanics models. The following computer experiment was conducted. A convolutional neural network was trained to solve the problem of binary classification of snapshots of snapshots of the location of spins of the Ising model on a two-dimensional ...
Added: September 25, 2024
Photoluminescence of dense arrays of InGaPAs/InGaAs quantum dots formed by substitution of group V elements
Makhov I., Kryzhanovskaya N., Dragunova A. et al., Journal of Luminescence 2024 Vol. 276 Article 120819
One drawback of self-organized quantum dots is their low optical gain. The development of new shaping methods that would allow higher gain, for example, due to a higher surface density of the QD array, remains an important task to date. In the present work, arrays of quantum dots have been formed by substituting phosphorous atoms ...
Added: August 27, 2024
Оптические свойства трехмерных островков InGaP(As), сформированных методом замещения элементов пятой группы
Kryzhanovskaya N., Dragunova A., Komarov S. et al., Оптика и спектроскопия 2021 Т. 129 № 2 С. 218–222
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spectroscopy. The PL line of the formed array of island lies in the range of 950–1000 nm at room temperature. The ...
Added: June 3, 2024
  • About
  • About
  • Key Figures & Facts
  • Sustainability at HSE University
  • Faculties & Departments
  • International Partnerships
  • Faculty & Staff
  • HSE Buildings
  • HSE University for Persons with Disabilities
  • Public Enquiries
  • Studies
  • Admissions
  • Programme Catalogue
  • Undergraduate
  • Graduate
  • Exchange Programmes
  • Summer University
  • Summer Schools
  • Semester in Moscow
  • Business Internship
  • Research
  • International Laboratories
  • Research Centres
  • Research Projects
  • Monitoring Studies
  • Conferences & Seminars
  • Academic Jobs
  • Yasin (April) International Academic Conference on Economic and Social Development
  • Media & Resources
  • Publications by staff
  • HSE Journals
  • Publishing House
  • iq.hse.ru: commentary by HSE experts
  • Library
  • Economic & Social Data Archive
  • Video
  • HSE Repository of Socio-Economic Information
  • HSE1993–2026
  • Contacts
  • Copyright
  • Privacy Policy
  • Site Map
Edit