Low power reconfigurable multilevel nanophotonic devices based on Sn-doped Ge2Sb2Te5 thin films

Acta Materialia. 2022. Vol. 234. Article 117994.

Lazarenko P., Kovalyuk V., An P., Kozyukhin S., Takáts V., Golikov A., Glukhenkaya V., Prokhodtsov A., Goltsman G.

In the past years, Ge2Sb2Te5 has been considered a promising functional material for a variety of reconfigurable multilevel devices, including photonic integrated circuits for the post-von Neumann arithmetic processing. However, despite significant advances, it is necessary to reduce the switching energy of Ge2Sb2Te5 for creation of the on-chip low power all-photonic spiking neural networks. The present work focuses on the effect of tin ion implantation on the properties of amorphous Ge2Sb2Te5 thin films, as well as on the performance of Mach-Zehnder interferometers and balanced beam splitters based on them. As a result, Sn-doping accompanied by the formation of weaker bonds in Ge2Sb2Te5 thin films is an efficient approach to significantly reduce the threshold energy of fs-laser initiated phase transitions and change the effective absorption coefficient. The possibility of using the Sn-doped Ge2Sb2Te5 thin films for fully optical multilevel reversible recording between 9 different levels (3 bits) has been demonstrated by experimental measurements of fabricated on-chip balanced beam splitters. The obtained results show that the Sn doping of Ge2Sb2Te5 layer can be used to optimize the properties of the GST225 thin films, in particular to reduce the switching energy. So, it has the potential to improve the characteristics of reconfigurable multilevel nanophotonic devices using the GST225 thin films, including fully non-volatile memory and developed on-chip low power all-photonic circuits for post-von Neumann arithmetic processing. © 2022 Acta Materialia Inc.

Keywords: интегральная оптика, doping, допирование, Chalcogenide, Ge₂Sb₂Te₅, Integrated optics devices, Phase change materials