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Numerical study of Valence Band states evolution in AlxGa1-xAs [111] QDs systems
Metal Organic Vapor-Phase Epitaxy (MOVPE) growth in an inverted pyramid provides an opportunity to grow nanostructure with predictable heterostructure potential. In this paper, we investigate the effect of nanostructure geometry and composition on optical properties and Valance Band (VB) character on examples of single Quantum Dot (QD), Quantum Dot Molecules (QDMs), and QD superlattices. As a model structure, we take well-known explored Quantum Dots (QDs) GaAs/AlGaAs systems in inverted pyramids. We examine optical properties under an external electric field and demonstrate a dynamic way to control the optical polarization properties and their evolution. Another interesting effect is the special modularity of the hole wavefunction also affects its type. In case of strong modularity and even in long QD that Ground State (GS) of the VB may be turned from a light hole to a heavy type. The ability to control the optical properties of QDs is important for the fabrication of future nano-optical devices since QDs are practical sources of single photons. In particular, the control over the energy and polarization of the emitted photons is important for quantum information technologies.