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Regular version of the site

Article

Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots

Photonics Research. 2019. Vol. 7. No. 6. P. 664-668.
Kryzhanovskaya N., Moiseev E., Зубов Ф. И., Можаров А., Максимов М. В., Калюжный Н. А., Минтаиров С. А., Кулагина М. М., Гусева Ю., Blokhin S., Кудрявцев К., Яблонский А., Морозов С., Berdnikov Y., Рувимов С., Zhukov A.

GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5  GHz/mA1/21.5  GHz/mA1/2 was estimated.