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Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots
Photonics Research. 2019. Vol. 7. No. 6. P. 664-668.
Kryzhanovskaya N., Moiseev E., Зубов Ф. И., Можаров А. М., Максимов М. В., Калюжный Н. А., Минтаиров С. А., Кулагина М. М., Гусева Ю. А., Blokhin S., Кудрявцев К. Е., Яблонский А. Н., Морозов С. В., Berdnikov Y., Рувимов С., Zhukov A.
GaAs-based microdisk lasers with an active region representing a dense array of indium-rich islands (InGaAs quantum well-dots) were studied using direct small-signal modulation. We demonstrate that using dense arrays of InGaAs quantum well-dots enables uncooled high-frequency applications with a GHz-range bandwidth for microdisk lasers. A maximum 3 dB modulation frequency of 5.9 GHz was found in the microdisk with a radius of 13.5 μm operating without a heatsink for cooling. A modulation current efficiency factor of 1.5 GHz/mA1/21.5 GHz/mA1/2 was estimated.
Priority areas:
engineering science
Language:
English
Publication based on the results of:
Moiseev E., Kryzhanovskaya N., Zhukov A. et al., Optics Letters 2018 Vol. 43 No. 19 P. 4554-4557
We study injection GaAs-based microdisk lasers capable of operating at room and elevated temperatures. A novel type of active region is used, namely InGaAs quantum well-dots representing a dense array of indium-rich islands formed inside an indium-depleted residual quantum well by metalorganic vapor phase epitaxy. We demonstrate a high output power of 18 mW, a differential ...
Added: September 27, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Letters 2017 Vol. 42 No. 17 P. 3319-3322
High-performance injection microdisk (MD) lasers grown on Si substrate are demonstrated for the first time, to the best of our knowledge. Continuous-wave (CW) lasing in microlasers with diameters from 14 to 30 μm is achieved at room temperature. The minimal threshold current density of 600 A/cm2600 A/cm2 (room temperature, CW regime, heatsink-free uncooled operation) is comparable to that of high-quality ...
Added: September 29, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Optics Express 2017 Vol. 25 No. 14 P. 16754-16760
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under ...
Added: September 29, 2020
Kryzhanovskaya N., Moiseev E., Зубов Ф. И. et al., Journal of Applied Physics 2019 Vol. 126 No. 6 P. 063107
The energy-to-data ratio (EDR) was evaluated for quantum-dot based microdisk laser directly modulated without external cooling. The experimental values of EDR decrease with decreasing diameter of the microdisk and reach 1.5 pJ/bit for the smallest diameter under study (10.5 μm). In larger microdisks (with a diameter greater than 20 μm), the EDR varies in proportion to the square ...
Added: December 8, 2020
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Laser Physics Letters 2018 Vol. 15 No. 1 P. 015802
The combination of high operation temperatures and small diode lasers directly grown on silicon substrates is essential for their application in future photonic integrated circuits. In this letter, results are presented for quantum dot III–V-on-Si microdisk diode lasers tested at elevated temperatures. To the best of our knowledge, we have demonstrated the first uncooled microlasers ...
Added: September 29, 2020
Kryzhanovskaya N., Zhukov A., Moiseev E. et al., Journal of Physics D: Applied Physics 2021 Vol. 54 Article 453001
Semiconductor whispering-gallery-mode (WGM) microresonators are promising candidates for
creating compact, energy-efficient light sources (microlasers) for various applications owing to
their small footprints, high Q factors, planar geometry, in-plane light emission, and high
sensitivity to the environment. In this review we present the most recent advances in III–V
microdisk/microring lasers. We briefly describe basic physics behind photonic WGM resonators
and discuss ...
Added: September 3, 2021
Зубов Ф. И., Максимов М. В., Moiseev E. et al., Optics Letters 2021 Vol. 46 No. 16 P. 3853-3856
We study the impact of improved heat removal on the performance
of InGaAs/GaAs microdisk lasers epi-side down
bonded onto a silicon substrate. Unlike the initial characteristics
of microlasers on a GaAs substrate, the former’s
bonding results in a decrease in thermal resistance by a factor
of 2.3 (1.8) in microdisks with a diameter of 19 (31) m,
attributed to a thinner ...
Added: August 30, 2021
Kryzhanovskaya N., Moiseev E., Polubavkina Y. et al., Journal of Applied Physics 2016 Vol. 120 No. 33 P. 233103
We report on microdisk lasers based on GaInNAs(Sb)/GaAs(N) quantum well active region. Their characteristics were studied under electrical and optical pumping. Small-sized microdisks (minimal diameter 2.3 μm) with unprotected sidewalls show lasing only at temperatures below 220 K. Sulfide passivation followed by SiNx encapsulation allowed us achieving room temperature lasing at 1270 nm in 3 μm GaInNAs/GaAs microdisk and at 1550 nm in 2.3 μm GaInNAsSb/GaAsN microdisk under optical pumping. Injection microdisk with a ...
Added: October 1, 2020
Zubov F., Maximov M., Kryzhanovskaya N. et al., Optics Letters 2019 Vol. 44 No. 22 P. 5442-5445
We report on direct large signal modulation and the reliability studies of microdisk lasers based on InGaAs/GaAs quantum well-dots. A 23 μm in diameter microlaser exhibits an open eye diagram up to 12.5 Gbit/s and is capable of error-free 10 Gbit/s data transmission at 30°C without temperature stabilization. The ageing tests of a 31 μm ...
Added: September 30, 2020
Kharchenko A. A., Nadtochiy A., Mintairov S. A. et al., Nano-Structures and Nano-Objects 2021 Vol. 25 Article 100628
Electronic states in a novel type of quantum-size heterostructures referred to as InGaAs quantum welldots
(QWDs) were experimentally studied using absorption in stripe waveguides of different lengths
based on a single, double, five, and ten QWD layers. The value of the modal absorption was measured
to be 70 cm−1 and 90 cm−1 for ground-state transition and high-energy one, ...
Added: January 26, 2021
Maximov M., Nadtochiy A., Kryzhanovskaya N. et al., Applied Sciences (Switzerland) 2020 Vol. 10 No. 3 Article 1038
We review epitaxial formation, basic properties, and device applications of a novel type of nanostructures of mixed (0D/2D) dimensionality that we refer to as quantum well-dots (QWDs). QWDs are formed by metalorganic vapor phase epitaxial deposition of 4–16 monolayers of InxGa1−xAs of moderate indium composition (0.3 < x < 0.5) on GaAs substrates and represent dense arrays ...
Added: September 30, 2020
Babich E. S., Scherbak, S., Asonkeng F. et al., Optical Materials Express 2019 Vol. 9 No. 10 P. 4090-4096
The statistics of hot spots in the ensemble of self-assembled silver nanoislands grown
on the surface of silver-to-sodium ion exchanged glass under hydrogen annealing was studied.
The comparison of the surface enhanced Raman scattering (SERS) performance of the nanoisland
films at different growth stages with the developed model of the hot spots formation revealed that
at the nanoislands coalescence ...
Added: November 9, 2020
ФГБНУ "НИИ ПМТ", 2019
Труды содержат представленные на конференцию доклады из вузовских, академических и отраслевых организаций России и стран СНГ (Армении, Азербайджана, Белоруссии, Казахстана, Узбекистана). В опубликованных докладах содержатся новые результаты исследований процессов образования, миграции и эволюции радиационных дефектов в твердых телах, радиационно-технологических методов модифицирования и обработки материалов с целью улучшения их эксплуатационных свойств, эффектов радиационно-стимулированной диффузии, радиационно-индуцированной сегрегации ...
Added: August 16, 2019
Бобров М. А., Блохин А. А., Кузьменков А. Г. et al., Оптика и спектроскопия 2019 Т. 127 № 7 С. 145-149
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design ...
Added: December 9, 2020
Kalmykov A., Melentiev P., Balykin V., Laser Physics Letters 2020 Vol. 17 No. 4 P. 045901
In this paper we present measurements and comparison of SPP propagation length at the practically important telecom wavelength (1560 nm) as well as in the near-infrared and visible spectral ranges. The measurements were carried out for plane SPP waves excited on Ag film surface using optical microscopy of SPP waves in the far field. We ...
Added: January 15, 2021
Gridchin V., Kotlyar K., Reznik R. et al., Nanotechnology 2021 Vol. 32 No. 33 Article 335604
InGaN nanostructures are among the most promising candidates for visible solid-state lighting
and renewable energy sources. To date, there is still a lack of information about the influence of
the growth conditions on the physical properties of these nanostructures. Here, we extend the
study of InGaN nanowires growth directly on Si substrates by plasma-assisted molecular beam
epitaxy. The results ...
Added: August 30, 2021
Kryzhanovskaya N., Zhukov A., Maximov M. et al., IEEE Journal on Selected Topics in Quantum Electronics 2015 Vol. 21 No. 6 P. 709-713
Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) in microlasers as small as 1 μm in diameter. The microlasers demonstrate ...
Added: September 30, 2020
Kryzhanovskaya N., Zubov Fedor I., Moiseev E. et al., Laser Physics Letters 2022 Vol. 19 No. 1 Article 016201
Characteristics of a compact III–V optocoupler heterogeneously integrated on a silicon substrate
and formed by a 31 μm in diameter microdisk (MD) laser with a closely-spaced
50 μm × 200 μm waveguide photodetector are presented. Both optoelectronic devices were
fabricated from the epitaxial heterostroctructures with InGaAs/GaAs quantum well-dot layers.
The measured dark current density of the photodetector was as ...
Added: December 2, 2021
Blokhin S., Бобров М. А., Блохин А. А. et al., Физика и техника полупроводников 2019 Т. 53 № 8 С. 1128-1134
The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser ...
Added: December 9, 2020
Малеев Н. А., Васильев А. П., Кузьменков А. Г. et al., Письма в Журнал технической физики 2019 Т. 45 № 21 С. 29-33
High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse ...
Added: December 8, 2020
Zhukov A., Moiseev E., Nadtochiy A. et al., Письма в Журнал технической физики 2020 Т. 46 № 16 С. 3-6
AlGaAs/GaAs microdisk lasers with InAs/InGaAs quantum dots region were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact put over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them p-contact down to separate contact pads. No effect of non-native substrate on electrical resistance, threshold current, ...
Added: August 25, 2020
Budkov Y., М. : ЛЕНАНД, 2020
Within the presented monograph for the first time statistical approaches, based on the self-consistent field theory, were presented for the theoretical description of the thermodynamic properties of the ion-molecular systems (electrolyte solutions, ionic liquids, dielectric polymers and metal-organic frameworks) in the bulk solution and at the interfaces with the account for their molecular structure. In ...
Added: November 18, 2019
Boldyrev K., Романов А., Хаула Е. et al., Journal of the American Ceramic Society 2019 Vol. 102 No. 5 P. 2745-2751
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl+ + Bi0 ↔ Tl0 + Bi+ at the crystal surface with subsequent Bi+ migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does ...
Added: February 8, 2019
Свинарев Ф. Б., Балашова Е. В., Кричевцов Б. Б. et al., Journal of Physics: Conference Series 2018 Vol. 1038 P. 012117
The polarization switching was studied in single crystals and thin films of 2- methylbenzimidazole (MBI) obtained by evaporation method from an MBI ethanol solution. Dielectric hysteresis loops were measured in the temperature interval 290-390 K and frequency range 20-1000 Hz for different amplitudes of the electric field. The Kolmogorov β-model with account of Mertz law ...
Added: November 10, 2020