InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

Письма в Журнал технической физики. 2019. Т. 45. № 21. С. 29–33.

Малеев Н. А., Васильев А. П., Кузьменков А. Г., Бобров М. А., Кулагина М. М., Трошков С. И., Малеев С. Н., Беляков В. А., Петрякова Е. В., Кудряшова Е. П., Фефелова Е. Л., Макарцев И. В., Blokhin S., Ахмедов Ф. А., Егоров А. В., Фефелов А. Г., Устинов В. М.

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

Keywords: транзистор, миллиметровый диапазон, Transistors, hemt, MILLIMETER BAND, пробивное напряжение

Publication based on the results of: Optoelectronic devices for optical interconnects and optical on-chip systems based on semiconductor nanomaterials (2020)