The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
The paper studies the effect of the dramatic fall in polymeric fiber strength as erosion increases under an oxygen plasma beam. At a relatively small fiber mass loss (20%), the breaking load is reduced by a factor of 20. SEM images reveal that fiber erosion is uneven, and show the deep local etching that leads to fiber breakdown.