Article
ВЛИЯНИЕ ПРОТОННОГО ОБЛУЧЕНИЯ НА НАПРЯЖЕНИЕ ПРОБОЯ ВЫСОКОВОЛЬТНОГО Р-N ПЕРЕХОДА
The effect of hydrogen-related shallow thermal donors and acceptor-like defects arising under proton irradiation of silicon on the breakdown voltage of a high-voltage p–n junction is considered. The relations making it possible to compute the breakdown voltage of the irradiated p–n junction taking into account the increase in critical field intensity during the ingress of hydrogen-related shallow thermal donors into the region of collisional ionization of the p–n junction are obtained. A technique for determination of the layer position and the minimum dose of hydrogen-related shallow thermal donors making it possible to decrease the breakdown voltage by a specified amount is proposed.
The dependence of the thermal characteristics of TVS-diodes during the passage of the pulse overload has been studied. The time dependences of the pulse voltage limitation and current are analyzed. Based on the analysis of the dependences, the thermal characteristics of the TVS-diode are calculated. It is shown that the parameters of the TVS-diodes deteriorate on reaching a current density of 160–300 A/cm2 and critical temperature of 250–300°С. The dependences of the thermal resistance and critical temperature of the TVS-diodes on the current density and the pulse duration are presented.
Novel TСAD-rad models for the bipolar and MOSFET structures have been developed taking into account the effect of proton radiation on the basic physical parameters (τ, μ, S, Nit). The simulation results are in good agreement with experimental data.
This paper presents results of experimental investigation of combined impact of 500 keV protons with fluences of 1015–1016 cm−2 and oxygen plasma with fluences of (0.8–3.5) 1020 cm−2 on polyimide films. Measured UV–vis transmission, Raman and XPS spectra of polyimide specimens before and after combined impact and data on the sample mass losses as a result of erosion due to oxygen plasma exposure are given. On the base of the obtained spectroscopic results, the changes in the polyimide structure caused by the proton and oxygen irradiation are analyzed and discussed.
Generalized error-locating codes are discussed. An algorithm for calculation of the upper bound of the probability of erroneous decoding for known code parameters and the input error probability is given. Based on this algorithm, an algorithm for selection of the code parameters for a specified design and input and output error probabilities is constructed. The lower bound of the probability of erroneous decoding is given. Examples of the dependence of the probability of erroneous decoding on the input error probability are given and the behavior of the obtained curves is explained.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.