Observation of zero linewidth enhancement factor at excited state band in quantum dot laser
The linewidth enhancement factor (LEF) of an InAs/InGaAs quantum dot Fabry-Pérot laser in a wide wavelength range from 1110 to 1300 nm, including ground state (GS) and exited state (ES) bands, is studied. LEF spectra were derived from amplified spontaneous emission spectra measured below the threshold in the pulse regime. The ES optical transition is characterised by significantly lower values of the LEF (≤0.54) as compared to the GS (≥1.21). Moreover, a zero LEF is observed within the ES spectral band. At sufficiently high currents, a near-zero LEF (|α| ≤ 0.1) is achieved in a wide spectral interval from 1146 to 1175 nm, in which the optical gain is not less than 9 cm-1.
Spontaneous emission spectra of two initially excited closely spaced identical atoms are very sensitive to the strength and the direction of the applied magnetic field. We consider the relevant schemes that ensure the determination of the mutual spatial orientation of the atoms and the distance between them by entirely optical means. A corresponding theoretical description is given accounting for the dipole-dipole interaction between the two atoms in the presence of a magnetic field and for polarizations of the quantum field interacting with magnetic sublevels of the two-atom system.
p-i-n photodiodes comprising dense arrays of InGaAs quantum dots (referred to as quantum well-dots) were fabricated, and the basic physical processes affecting their highspeed performance were studied for the first time by measuring the frequency response under illumination with photons absorbed either in the quantum well-dots (905-nm illumination) or mainly in GaAs layers (860-nm illumination). A GaAs p-i-n photodiode of similar design was also measured for comparison. A maximum −3 dB bandwidth of 8.2 GHz was measured for the 905-nm light illumination, and maximum internal −3 dB bandwidth of 12.5 GHz was estimated taking into account the effect of RC-parasitic by the equivalent circuit model. It was found that the internal response is mainly controlled by the carrier drift time in the depletion region; this process can be characterized by a field-dependent effective velocity of charge carriers in the layered heterostructure, which is approximately half the saturation velocity in GaAs. The carrier escape from the InGaAs quantum well-dots was found to has less effect; the escape time was estimated to be 12–17 ps depending on the reverse-bias voltage applied.
The rate equations are used to analyze the characteristics of a tandem consisting of a laser diode and a semiconductor optical amplifier made of a single heterostructure with quantum dots. The optimal value of the current distribution coefficient the amplifier and the laser, as well as the optimal resonator length that provides the highest output power of the tandem were determined. It is shown that the use of the tandem allows, at the same total consumed current, to significantly (more than 4 times for 1A) increase the power emitted through the groundstate optical transition in comparison with that achievable with a laser diode solely being limited by the onset of lasing through an excited-state optical transition.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
Let G be a semisimple algebraic group whose decomposition into the product of simple components does not contain simple groups of type A, and P⊆G be a parabolic subgroup. Extending the results of Popov , we enumerate all triples (G, P, n) such that (a) there exists an open G-orbit on the multiple flag variety G/P × G/P × . . . × G/P (n factors), (b) the number of G-orbits on the multiple flag variety is finite.
I give the explicit formula for the (set-theoretical) system of Resultants of m+1 homogeneous polynomials in n+1 variables