Рентгеновская дифракционная томография с применением лабораторных источников для исследования одиночных дислокаций в слабо поглощающем монокристалле кремния

Автометрия. 2019. № 2. С. 28–35.

Суворов Э. В., Золотов Д., Асадчиков В., Бузмаков А., Дьячков И., Кривоносов Ю., Чуховский Ф.

This paper is a continuation of previous studies on the development of X-ray topotomography
using laboratory equipment. The results on the spatial location of a single polygonal
dislocation half-loop in a silicon single crystal were obtained as a result of testing the sensitivity of
the X-ray topo-tomo diffractometer. A comparison was made with high-resolution experimental data
obtained at the European synchrotron radiation facility (ESRF). The experimental procedure, software,
and hardware for 3D reconstruction of the investigated single defect — a polygonal dislocation
half-loop — are described.

Keywords: рентгеновская томография, x-ray tomography, x-ray topography, рентгеновская топография, single dislocation half-loops, единичные дислокационные полупетли