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Regular version of the site

Article

Обобщенная TCAD-модель для учета радиационных эффектов в структурах МОП и биполярных транзисторов

Наноиндустрия. 2018. № 82. С. 404-405.

The paper considers a new TCAD Rad model for BJTs and MOSFETs for proton radiation. The equations for radiation-dependent parameters (life time, mobility, surface velocity, traps concentration) have been added in Sentaurus TCAD. The simulation results are in good agreement with experimental data.