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Regular version of the site

Article

Состояние работ в области моделирования полупроводниковых компонентов с учетом влияния радиации и температуры

Наноиндустрия. 2018. № 82. С. 42-45.

The article highlights the status of TCAD and SPICE modeling of CMOS, SOI CMOS, SiGe BiCMOS VLSI components intended for operation under the influence of radiation (neutrons, electrons, protons, y- and X-ray, single particle, pulsed radiation), high (up to +300°C) and low (up to –200°C) temperatures. TCAD and SPICE models of BJTs and MOSFETs, and methods for determining their parameters have been described. Further directions of TCAD and SPICE modeling of IС components have been considered.