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Regular version of the site

Article

Analytical approach to the multi-state lasing phenomenon in quantum dot lasers

Applied Physics Letters. 2013. Vol. 102. P. 112101.
Omelchenko A., Zhukov A., Maksimov M., Savelyev A., Korenev V.

We introduce an analytical approach to describe the multi-state lasing phenomenon in quantum dot lasers. We show that the key parameter is the hole-to-electron capture rate ratio. If it is lower than a certain critical value, the complete quenching of ground-state lasing takes place at high injection levels. At higher values of the ratio, the model predicts saturation of the ground-state power. This explains the diversity of experimental results and their contradiction to the conventional rate equation model. Recently found enhancement of ground-state lasing in p-doped samples and temperature dependence of the ground-statepower are also discussed.