Bulk Photoemission from Plasmonic Nanoantennas of Different Shapes.
We elaborate a semi-analytical model for calculation of the bulk internal emission of photoelectrons from metal nanoparticles into a semiconductor matrix. We introduce important effects in the model as the jump of the effective electron mass at the metal–semiconductor interface and cooling of the hot electrons because of electron–electron and electron–nanoparticle surface collisions in the metal. We study the interplay between the plasmonic electric dipole and quadrupole resonances and reveal the optimum parameters for different geometrical shapes of nanoparticles with respect to the photoemission cross section. We find that the absorption cross section well-predicts the optimum size of the dipolar nanoparticle. This opens the possibility for the fast optimization and design of the photoelectric devices.
Numerical simulations show that the introduction of aluminum nanoparticles into one layer of a bulk-heterojunction organic solar cell leads to an increase in the rate of exciton generation in the active layer of the cell. According to calculations of the optical absorption in the cell, which have been performed in the effective refractive index approximation using the Maxwell-Garnet model, a maximum relative increase in the rate of exciton generation due to plasmonic nanoparticles is about 4%.
Internal emission of photoelectrons from metal films and nanoparticles (nanowires and nanospheres) into a semiconductor matrix is studied theoretically by taking into account the jump of the effective electron mass at the metal – semiconductor interface and the cooling effect of hot electrons due to electron – electron collisions in the metal. The internal quantum efficiency of photoemission for the film and nanoparticles of two types (nanospheres and nanowires) is calculated. It is shown that the reduction of the effective mass of the electron during its transition from metal to semiconductor may lead to a significant (orders of magnitude and higher) decrease in the internal quantum efficiency of bulk photoemission.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.