Особенности туннельных процессов в полупроводниковых наноструктурах
The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently considering the nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained as well as new phenomena to be predicted.
We present a general methodology for evaluating structure factors defining the orientation dependence of tunneling ionization rates of molecules, which is a key process in strong-field physics. The method is implemented at the Hartree-Fock level of electronic structure theory and is based on an integralequation approach to the weak-field asymptotic theory of tunneling ionization, which expresses the structure factor in terms of an integral involving the ionizing orbital and a known analytical function. The evaluation of the required integrals is done by three-dimensional quadrature which allows calculations using conventional quantum chemistry software packages. This extends the applications of the weak-field asymptotic theory to polyatomic molecules of almost arbitrary size. The method is tested by comparison with previous results and illustrated by calculating structure factors for the two degenerate highest occupied molecular orbitals (HOMOs) of benzene and for the HOMO and HOMO-1 of naphthalene
Abstract — The transient current curves for a polar molecularly doped polymer were compared for the near? surface and bulk generation of charge carriers. The horizontal plateau on the first curve was expected to trans? form into a tilted straight line under the quasiequilibrium transport conditions, but it did not. Instead, for bulk generation, the curve was a hyperbola, on which the slope decreased almost sevenfold during the existence of the plateau. This behavior points to nonequilibrium charge carrier transport. The appearance of a plateau in our case is explained by the effect of the defective surface layer, as indicated in our previous communications.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.