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Article

Determination of the Element Distribution in Films Deposited using the Plasma Focus Facility by Rutherford Backscattering

Kolokoltsev V. N., Kulikauskas V. S., Bondarenko G.G., Eriskin A. A., Nikulin V. Y., Silin P. V.

C, Cu and W element profiles in films deposited using Plasma Focus facility (PF-4, FIAN) were studied by the method of Rutherford backscattering of 2 MeV He+ ions. The films were deposited on glass substrates in the Ar orifice gas. The element profiles were found to depend significantly on the particle kinetic energy. The penetration depth of particles with ~105 m/s speed was about 1.5 μm. The corresponding glass thickness element profiles were non-linear. For each element, there was the maximum layer depth under the glass surface. The formation of Cu, W and C layers under the glass surface and their overlapping was the feature of the films deposited using the PF-4 facility. Such an arrangement of layers told significantly this method of film deposition from the conventional methods used low deposition atom rates, as well the diffusion. Because of mentioned characteristics of deposition, the obtained films were dielectrics.