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Regular version of the site

Article

Europium Silicide – a Prospective Material for Contacts with Silicon

Scientific Reports. 2016. No. 6.
Averyanov D. V., Tokmachev A. M., Karateeva K. G., Karateev I. A., Lobanovich E. F., Prutskov G. V., Parfenov O. E., Taldenkov A. N., Vasiliev A. L., Storchak V. G.

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.