Определение распределения элементов методом Резерфордовского обратного рассеяния в пленках, напыленных на установке Плазменный фокус
The method of Rutherford back scattering of He + ions with 2 MeV studied the distribution profiles of the elements C, Cu and W in the films deposited on the discharge installation type "plasma focus". The films are deposited on glass substrates in Ar plasma-forming gas. It is found that the element distribution profiles vary significantly from the kinetic energy of the particles. Particles having a velocity about 105 m / s, penetrates to a depth of about 1.5 microns. Appropriate distribution profiles elements for glass thickness are nonlinear. For each element, there is a maximum depth of the layer under the surface of the glass. A feature of the films obtained on the setting of "plasma-focus" is the formation of layers of the elements Cu, W and C at the glass surface and their mutual overlap. This arrangement of layers distinguishes described film deposition method of the commonly used methods of application at low speeds the deposition of atoms, as well as by diffusion. It is found that the obtained film are insulators.
This edition presents abstracts of the reports of the Meeting and Youth Conference on Neutron Scattering and Synchrotron Radiationin Condensed Matte (NSSR-CM-2014)r
We demonstrate the possibility of determining a large group of physical properties of DLC films using only one group of methods based on X-ray interference studies. These include methods for determination of the film thickness, material density and roughness of the surface. We present the analysis of possibilities to use the method of the two-crystal X-ray spectrometer to evaluate internal stress and to deduce the modules of elasticity and thermal expansion coefficients of the film. It is shown that this method can be used for the in-situ control jf the film parameters during the film deposition in the technological chamber.
Method of in-situ X-ray reflectivity is presented. The results of investigation of titanium and silicon thin films in real-time of their deposition on silicon substrates are discussed.
The dynamics of a two-component Davydov-Scott (DS) soliton with a small mismatch of the initial location or velocity of the high-frequency (HF) component was investigated within the framework of the Zakharov-type system of two coupled equations for the HF and low-frequency (LF) fields. In this system, the HF field is described by the linear Schrödinger equation with the potential generated by the LF component varying in time and space. The LF component in this system is described by the Korteweg-de Vries equation with a term of quadratic influence of the HF field on the LF field. The frequency of the DS soliton`s component oscillation was found analytically using the balance equation. The perturbed DS soliton was shown to be stable. The analytical results were confirmed by numerical simulations.
Radiation conditions are described for various space regions, radiation-induced effects in spacecraft materials and equipment components are considered and information on theoretical, computational, and experimental methods for studying radiation effects are presented. The peculiarities of radiation effects on nanostructures and some problems related to modeling and radiation testing of such structures are considered.
This volume presents new results in the study and optimization of information transmission models in telecommunication networks using different approaches, mainly based on theiries of queueing systems and queueing networks .
The paper provides a number of proposed draft operational guidelines for technology measurement and includes a number of tentative technology definitions to be used for statistical purposes, principles for identification and classification of potentially growing technology areas, suggestions on the survey strategies and indicators. These are the key components of an internationally harmonized framework for collecting and interpreting technology data that would need to be further developed through a broader consultation process. A summary of definitions of technology already available in OECD manuals and the stocktaking results are provided in the Annex section.