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  • Определение распределения элементов методом Резерфордовского обратного рассеяния в пленках, напыленных на установке Плазменный фокус

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Определение распределения элементов методом Резерфордовского обратного рассеяния в пленках, напыленных на установке Плазменный фокус

Колокольцев В. Н., Куликаускас В. С., Бондаренко Г. Г., Ерискин А. А., Никулин В. Я., Силин П. В.

The method of Rutherford back scattering of He + ions with 2 MeV studied the distribution profiles of the elements C, Cu and W in the films deposited on the discharge installation type "plasma focus". The films are deposited on glass substrates in Ar plasma-forming gas. It is found that the element distribution profiles vary significantly from the kinetic energy of the particles. Particles having a velocity about 105 m / s, penetrates to a depth of about 1.5 microns. Appropriate distribution profiles elements for glass thickness are nonlinear. For each element, there is a maximum depth of the layer under the surface of the glass. A feature of the films obtained on the setting of "plasma-focus" is the formation of layers of the elements Cu, W and C at the glass surface and their mutual overlap. This arrangement of layers distinguishes described film deposition method of the commonly used methods of application at low speeds the deposition of atoms, as well as by diffusion. It is found that the obtained film are insulators.