Study of the structure of crystalline tellurium on different substrates

Crystallography reports. 2015. Vol. 60. No. 4. P. 616–619.

Muslimov A. E., Butashin A. V., Mikhailov V. I., Shapiev I. M., Ismailov A. M., Novoselova E.G., Smirnov I.S.

Translator: Е. Бондарева

The epitaxial growth of tellurium films by chemical vapor deposition is investigated. It is established that, under thermochemical activation conditions, tellurium films grow from vapor phase in the (10 $$\bar 1$$0) plane, parallel to the (001) muscovite substrate and the (0001) sapphire substrate. It is demonstrated that tellurium films on (001) muscovite substrates are more homogeneous and can be detached from the substrate, which makes them interesting for carrying out experiments on epitaxy of CdTe films. Tellurium films on sapphire are more heterogeneous and mosaic; however, their growth is accompanied by the formation of hexagonal tellurium microtubes with a high aspect ratio: a diameter of ~1–10 μm and a length of ~1–10 mm. © 2015, Pleiades Publishing, Inc.

Keywords: тонкие пленки, thin films, кристаллическая структура, crystal structure, tellurium, теллур

Publication based on the results of: Theoretical and experimental investigation of influence of the concentrated energy flows and temperature on electrophysical properties of functional materials (2015)