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  • Влияние различных видов радиации на характеристики кремний-германиевых гетеропереходных транзисторов

Article

Влияние различных видов радиации на характеристики кремний-германиевых гетеропереходных транзисторов

An overview is given of published papers on investigations of ionizing radiation influence (gamma, neutron, and proton) on characteristics of silicon-germanium heterojunction transistors -- elements of SiGe BiCMOS integrated circuits of 4 generations with design rules 0.25, 0.18, 0.13, and 0.09 um. Experimental data are explained on the basis of modern understanding of radiation effects in bipolar junction transistors with proper consideration of silicon-geramnium heterostructure properties. It is shown that major SiGe HBT parameters (beta, gm, VA, fT, fmax etc.) are less succeptible to radiation influence unlike silicon transistors. In total absorbed dose, SiGe HBTs feature unique hardness, that is 50-100 Mrads for the latest SiGe technology.