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Сравнительный анализ подходов к определению разброса температурно-зависимых параметров SPICE-моделей МОП-транзисторов

Наноиндустрия. 2025. Т. 18. № S11-2 (135) . С. 848–854.
Khlynov P., Sambursky L. M.

Taking into account the variation in the parameters of SPICE models of semiconductor components in the circuit modeling of electronic components is necessary for a more accurate assessment of the limits of their operability during the design of electronic equipment. This is especially important for equipment designed to operate in conditions other than normal or those with strict requirements. In this paper, various approaches are compared and analyzed to obtain the values of the spread of temperature-dependent parameters of SPICE models of MOSFETs in an extended temperature range.; A refined procedure is proposed for determining (extracting) the corresponding parameters of the SPICE models of the MOSFETs based on the measurement results of the batch of components.

Research target: Electronics and Electrical Engineering
Language: Russian
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Keywords: определение параметров моделейметод Монте-КарлоМОП-транзисторыMOSFETsSPICE-моделивлияние температурыразброс параметровcompact SPICE modelsSPICE-model parameter extractionvariety of parametersinfluence of temperature
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