The materials of The International Scientific – Practical Conference is presented below.
The Conference reflects the modern state of innovation in education, science, industry and social-economic sphere, from the standpoint of introducing new information technologies.
It is interesting for a wide range of researchers, teachers, graduate students and professionals in the field of innovation and information technologies.
Changes in the morphology of the vanadium surface as a result of separate and sequential action of helium ions (energy-30 Kev, dose - 1.0 × 1022 m-2 , ion flux density – 4,8 × 1018 m-2 s-1 , temperature ~ 500 K ) and high-power pulsed laser radiation in the modulated q-factor mode (power density q = 1.2•108 W/cm2, pulse duration τ0 = 50 ns, the number of pulses N from 1 to 4) were investigated. It was found that the effect of laser irradiation on vanadium samples before and after ion implantation is identical (the formation of a hole surrounded by a breastwork, which occurred during the splash of molten metal), but in the case of preliminary introduction of helium into the material, the metal splash is more intense. Helium implantation into the samples causes radiation blistering, and the subsequent impact of laser pulses increases the erosion of the material in the zone located directly behind the hole (an increase in the number of exfoliated layers, the merger of blisters, etc.), which is due to sufficiently high temperatures in this area even after the termination of the laser pulse. Under real reactor conditions, this can lead to an increase of plasma contamination.
In the paper we demonstrate that the thermal doping of SiO2 film by phosphorus, causing formation of thin film of phospho-silicate glass on its surface, allows to rise charge stability of gate dielectric of MIS structure. We have ascertained that a presence of the film of phospho-silicate glass has given a possibility to significantly lower local injection currents flowing within defects because of electron capturing by traps located in the film of phospho-silicate glass what results in the rising of energy barrier. As a result, amount of the structures that comes to a state of breakdown at low values of charge injected into the dielectric under high fields noticeably reduces. We show that heating processes of injected electrons lowers in the films of phospho-silicate glass and this results in increasing of charge stability of the gate dielectric under high-field injection.
Superplastic blow forming is a technology of shell parts production. The development of these processes requires computer simulation which cannot be realized without accurate parameters of the applied material. This characterization can be based on results of free bulging tests. Characterization techniques utilize the models of the dome growth during the bulging test. This study is devoted to the assessing of friction coefficient effect on the linear behavior of normalized thickness - normalized height relation.
We have modeled the charge effects in radiation MOS sensors functioning in a wide range of electric fields including high-field injection of electrons into the dielectric film. In order to study the charge effects taking place in MOS sensors, we use an extended model suggested by us previously. The extended model, besides the accumulation of positive charge in the dielectric and the generation of the surface states at the interface, takes into consideration the accumulation of negative charge in the bulk of dielectric film caused by the electron capturing on traps. We demonstrate that the accumulation of the negative and positive charges in the bulk of the gate dielectric under high fields can significantly influence on the redistribution of electric fields inside the dielectric and, as a sequence, on change of the charge state of MOS structure which describes the sensor characteristics.
We have studied the solid state dewetting of ten monolayer sthick Ag film deposited on periodicall ypatterned Si(557) surface. The annealing of the system in the ultra-high vacuum at the temperatures between 300 and 400°C resulted in full agglomeration of the film and formation of faceted single crystalline Ag nanoparticles exhibiting bimodal size distribution.We demonstrated that some particles contain screw dislocations producing a step on the upper particle facet.We related the bimodality in particles distribution with the ability of dislocation containing Ag particles to evolve by Ostwald ripening mechanism.
Composite materials based on heterogeneous membranes MK-40 modified by a thin layer of homogeneous cation-exchange perfluorinated sulfo membrane MF-4SK doped with 2 and 5% ceria are prepared. The transport characteristics of these membranes in different ionic forms are studied. It is shown that the conductivity of ionic forms of membranes increases in the sequence Li+ < Na+ < К+ < H+. In all these forms except for the lithium form, the membrane containing 2% ceria has the highest conductivity. Modification leads to a considerable increase in selectivity of membranes which manifests itself as a decrease in transport numbers of anions (from 0.006 for the original membrane to 0.002 for the membrane with 5% ceria). The higher selectivity with respect to the transfer of nitrate ions as compared with chloride ions is observed.
In pnictide RbEuFe4As4, superconductivity sets in at 36 K and coexists, below 15−19 K, with the long-range magnetic ordering of Eu 4f spins. Here we report scanning tunneling experiments performed on cold-cleaved single crystals of the compound. The data revealed the coexistence of large Rb-terminated and small Eu-terminated terraces, both manifesting 1 × 2 and \sqrt 2 × \sqrt 2 reconstructions. On \sqrt 2 × \sqrt 2 surfaces, a hidden electronic order with a period ∼5 nm was discovered. A superconducting gap of ∼7 meV was seen to be strongly filled with quasiparticle states. The tunneling spectra compared with density functional theory calculations confirmed that flat electronic bands due to Eu 4f orbitals are situated ∼1.8eV below the Fermi level and thus do not contribute directly to Cooper pair formation.
Single crystals of Pr3+ doped hexa-aluminate Sr0.7La0.3Mg0.3Al12O19 (ASL) were prepared for spectroscopic characterization. We investigated their optical spectroscopic properties in σ and π polarization of light. Absorption spectra were recorded in extended spectral range, 400 nm–5400 nm. Energies of Pr3+ crystal field states were determined. In addition to the major D3h sites, minor sites were found. Judd-Ofelt analysis was performed: the J-O parameters Ωt were determined to be 1.06 x 10^-20 cm-2, 2.31 x 10^-20 cm-2 and 3.43 x 10^-20 cm-2 for t = 2, 4 and 6, respectively. The radiative lifetime was 38 μs for the emitting state 3P0.
We have studied high-resolution low-temperature IR luminescence and absorption spectra of undoped high-quality SiC single crystals of the 4H and 6H hexagonal modifications. Narrow lines with a width of smaller than 0.2 cm–1 have been revealed, with some of which being observed for the first time. We have found that some of the lines in the 4H and 6H modifications have similar structures; however, the lines in SiC-4H are shifted to the high-energy part of the spectrum by ~180 cm–1. For the most intense quartet in the range of 1.3 μm, we have succeeded in constructing the energy structure of levels for both the 4H modification and the 6H modification based on their luminescence and absorption spectra.