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Book chapter

Расчет ВАХ бетавольтаических микробатарей с использованием универсальной TCAD модели

С. 291-294.

 

Presented TCAD-silicon betavoltaicheskogo element model for studying cell characteristics depending on its three-dimensional structure. To simulate the results of generation of electron-hole pairs when exposed to radiation from the source of beta particles used tuned optical generation model, available in TCAD.The dependence of the current-voltage characteristics of the element betavoltaicheskogo doping profile, temperature and type of semiconductor material for Ni-63 radiation source