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Regular version of the site

Book chapter

TCAD Simulation of Total Ionization Dose Response of 45nm High-K MOSFETs on Bulk Silicon and SOI Substrate

P. 27-30.

New semi-empirical model accounting for TID dependences of bulk, oxide, HfO2/Si interface trap densities, carrier mobilities, lifetime of device material was developed and introduced into TCAD tool. TID response of 45nm high-k MOSFETs on bulk and SOI substrate was simulated.