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Regular version of the site

Book chapter

SiGe HBT TCAD Simulation Taking into Account Impact of Proton Radiation

P. 9-12.
Konstantin O. Petrosyants, Maxim V. Kozhukhov.
Performance degradation of SiGe HBT after proton radiation impact is investigated using Synopsys Sentaurus tool. A new model to account for the impact of proton irradiation on physical parameters (τ, S0, Nit) is included in the program. The method to account for the impact of proton radiation is based on additivity of the ionization and displacement effects. Comparison of simulated and experimental characteristics of SiGe HBT after subjection to proton fluences up to 5·10^13 p/cm^2 shows the 10-20% error.