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Regular version of the site

Article

Modification of MIS Devices by Radio-Frequency Plasma Treatment

Acta Physica Polonica A . 2019. Vol. 36. No. 2. P. 263-266.
Andreev D. V., Bondarenko G.G., Andreev V. V., Maslovsky V. M., Stolyarov A. A.

The paper considers an influence of different kinds of radio-frequency plasma treatments onto modification
of MIS structures with a thermal SiO2 film which is aimed at improvement of electro-physical parameters of
the film. It was found that for the modification of MIS structures it is more preferable to utilize the oxygen
plasma radio-frequency plasma treatment performed by a setup with the parallel-plate-type reactor. This is due to
the fact that setup allows to have lesser degradation of charge characteristics of the gate dielectric in comparison
with a setup with the cylindrical quartz reactor. The radio-frequency plasma treatment stimulates restructuring
of SiO2 film and, as a result, diminishes possibility of sample breakdown and raises injection and radiation stability
of the samples.