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Regular version of the site

Article

Electron-phonon relaxation time in ultrathin tungsten silicon film

arXive. 2016.
Sidorova M., Semenov A., Korneev A., Chulkova G. M., Korneeva Y., Mikhailov M., Devizenko A., Kozorezov A., Goltsman G.

Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin
disordered films of tungsten silicide. We found a response time τR ~ 800 ps at critical temperature Tc = 3.4 K, which scales as
T –3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck
effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at
modulation frequency, and the inelastic electron-phonon relaxation time τe–ph. We estimate the electron-phonon relaxation
time to be in the range τe–ph ~ 100-200 ps at 3.4 K.